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Created with Pixso. LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

Marchio: Crystro
Numero di modello: SCR-2026-27-01
Tempo di consegna: 5-6 SETTIMANE
Condizioni di pagamento: T/T, Western Union, MoneyGram, PayPal
Informazioni dettagliate
Luogo di origine:
Cina
Formula molecolare:
LaAlO3
Metodo di crescita:
Czochralski
Struttura cristallina:
sistema cristallino esagonale
Ingraticci costante:
a=5,357 A c=13,22 A
Durezza di Mohs:
6.5
Densità:
6,52 g/cm3
Punto di fusione:
2080°C
Costante dielettrica:
ε=21
Coefficiente di dilatazione termica:
10x10-6/K
Perdita di TanS:
~3x10-4@300K,~0,6x10-4@77K
Evidenziare:

LaAlO3 single crystal substrate

,

Lanthanum aluminate substrate for superconductors

,

High-temperature superconducting thin film substrate

Descrizione del prodotto

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

 

Lanthanum aluminum oxide (LaAlO3) is a high-temperature superconducting single-crystal substrate material. It is an excellent substrate material for the epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films. Its superior dielectric properties make it suitable for the fabrication of low-loss microwave amplifiers and dielectric resonant devices.

Size Φ76.2mm
Thickness 0.5mm or customer customization
Polishing Double or single throwing
Crystal optics <100>,<110>,<111>
Surface Roughness Ra Ra≤1nm
Crystalline precision ±0.2°
Positioning edge accuracy 2° (customizable within 1°)

Lanthanum aluminate (LaAlO3) single crystal is a kind of industrial, large-size HTS thin film substrate single crystal material. LaAlO3 crystal matches well with many kinds of perovskite structure materials, and is the substrate material for epitaxial growth of high temperature superconducting films and giant magnetoresistance films. At the same time, lanthanum aluminum crystals have a low dielectric constant and good microwave dielectric performance, so they are suitable for low-loss microwave amplifier devices and dielectric resonance applications.

 

Main characteristics:

Low dielectric loss

The lattice matches well

Small coefficient of thermal expansion

Good chemical stability

Good thermal stability

Typical applications:

High-temperature superconducting thin film extension substrate

Giant magnetic film outer lining

Microwave amplification and dielectric resonance

Un buon prezzo.  in linea

Dettagli dei prodotti

Created with Pixso. Casa. Created with Pixso. prodotti Created with Pixso.
Substrati a cristallo singolo
Created with Pixso. LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

Marchio: Crystro
Numero di modello: SCR-2026-27-01
Condizioni di pagamento: T/T, Western Union, MoneyGram, PayPal
Informazioni dettagliate
Luogo di origine:
Cina
Marca:
Crystro
Numero di modello:
SCR-2026-27-01
Formula molecolare:
LaAlO3
Metodo di crescita:
Czochralski
Struttura cristallina:
sistema cristallino esagonale
Ingraticci costante:
a=5,357 A c=13,22 A
Durezza di Mohs:
6.5
Densità:
6,52 g/cm3
Punto di fusione:
2080°C
Costante dielettrica:
ε=21
Coefficiente di dilatazione termica:
10x10-6/K
Perdita di TanS:
~3x10-4@300K,~0,6x10-4@77K
Tempi di consegna:
5-6 SETTIMANE
Termini di pagamento:
T/T, Western Union, MoneyGram, PayPal
Evidenziare:

LaAlO3 single crystal substrate

,

Lanthanum aluminate substrate for superconductors

,

High-temperature superconducting thin film substrate

Descrizione del prodotto

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

 

Lanthanum aluminum oxide (LaAlO3) is a high-temperature superconducting single-crystal substrate material. It is an excellent substrate material for the epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films. Its superior dielectric properties make it suitable for the fabrication of low-loss microwave amplifiers and dielectric resonant devices.

Size Φ76.2mm
Thickness 0.5mm or customer customization
Polishing Double or single throwing
Crystal optics <100>,<110>,<111>
Surface Roughness Ra Ra≤1nm
Crystalline precision ±0.2°
Positioning edge accuracy 2° (customizable within 1°)

Lanthanum aluminate (LaAlO3) single crystal is a kind of industrial, large-size HTS thin film substrate single crystal material. LaAlO3 crystal matches well with many kinds of perovskite structure materials, and is the substrate material for epitaxial growth of high temperature superconducting films and giant magnetoresistance films. At the same time, lanthanum aluminum crystals have a low dielectric constant and good microwave dielectric performance, so they are suitable for low-loss microwave amplifier devices and dielectric resonance applications.

 

Main characteristics:

Low dielectric loss

The lattice matches well

Small coefficient of thermal expansion

Good chemical stability

Good thermal stability

Typical applications:

High-temperature superconducting thin film extension substrate

Giant magnetic film outer lining

Microwave amplification and dielectric resonance